Recent progress of diamond device toward power application

Julien Pernot (1) , Gauthier Chicot (1) , Alexandre Fiori (1) , Aboulaye Traoré (1) , Thu Nhi Tran Thi (1) , Pierre-Nicolas Volpe (1) , David Eon (1) , Franck Omnès (1) , Etienne Bustarret (1) , Etienne Gheeraert (1) , Pierre Muret (1)

1 NEEL - SC2G - Semi-conducteurs à large bande interdite

The state of the art of the Institut Néel research activity in the field of diamond power devices will be described and discussed. The active layers of the device are based on boron-doped monocristalline (100) diamond (with doping level varying between 1014 to 1021 cm-3) grown on Ib high temperature high pressure (HPHT) diamond substrate. The progresses done on diamond/metal interface, diamond/dielectric interface, or sharp gradient doping, permit recently the fabrication of original structures and devices, which will be detailed here (Schottky diode, boron doped δ-FET and MOS capacitance).

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Julien Pernot, Gauthier Chicot, Alexandre Fiori, Aboulaye Traoré, Thu Nhi Tran Thi, et al.. Recent progress of diamond device toward power application. EXMATEC 2012 : 11th Expert Evaluation and Control of Compound Semicon- ductor Materials and Technologies conference, Porquerolles Islands, France., May 2012, Porquerolles, France. ⟨hal-00994084⟩