BJT application expansion by insertion of superjunction

Loïc Théolier (1) , Chawki Benboujema (1) , Ambroise Schellmanns (1) , Nathalie Batut (1) , Yves Raingeaud (1) , Jean-Baptiste Quoirin (2)

1 GREMAN - UMR 7347 - GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)
2 ST-TOURS - STMicroelectronics [Tours]

In this paper, some high voltage Bipolar Junction Transistors are presented and compared in order to suggest a switch for household appliances with fully turn-on, turn-off control. For the first time, a comparative theoretical study, using 2D simulations, shows that concepts like the "superjunction" improve the static behaviour of conventional BJT. These new structures are compared with a SJMOSFET and an IGBT. The new BJT exhibits lower static losses than SJMOSFET and gives up an interest in bipolar structure.

Domaines: Energie électrique

Loïc Théolier, Chawki Benboujema, Ambroise Schellmanns, Nathalie Batut, Yves Raingeaud, et al.. BJT application expansion by insertion of superjunction. 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, Jun 2010, Hiroshima, Japan. pp.157 - 160. ⟨hal-00991541⟩