Probing the density of states in a metal-oxide-semiconductor field-effect transistor

L.E. Calvet (1) , J.P. Snyder , Wolfgang Wernsdorfer (2)

1 IEF - Institut d'électronique fondamentale
2 NEEL - QuantECA - Circuits électroniques quantiques Alpes

Tunneling spectroscopy was used to probe the density of states in a metal-oxide-semiconductor field-effect transistor that has tunneling contacts for the source/drain electrodes. For long channel transistors, the density of states of the two-dimensional gas exhibits a logarithmic dependence, consistent with weak electron interactions in the diffusive regime. For smaller devices deviations from this dependence were observed and attributed to screening from the nearby source/drain electrodes.

Domaines: Physique [physics]

L.E. Calvet, J.P. Snyder, Wolfgang Wernsdorfer. Probing the density of states in a metal-oxide-semiconductor field-effect transistor. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 78 (19), pp.193309. ⟨10.1103/PhysRevB.78.193309⟩. ⟨hal-00984281⟩