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Microstructural characterization of chemical bath deposited and sputtered Zn(O,S) buffer layers

Abstract : The present work aims at investigating the microstructure of Zn(O,S) buffer layers relative to their deposition route, namely either chemical bath deposition (CBD) or RF co-sputtering process (PVD) under pure Ar. The core of the study consists of cross-sectional transmission electron microscopy (TEM) characterization of the differently grown Zn(O,S) thin films on co-evaporated Cu(In,Ga)Se-2 (CIGSe) absorbers. It shows that the morphology of Zn(O, S) layer deposited on CIGSe using CBD process is made of a thin layer of well oriented ZnS sphalerite-(111) and/or ZnS wurtzite-(0002) planes parallel to CIGSe chalcopyrite-(112) planes at the interface with CIGSe followed by misoriented nanometer-sized ZnS crystallites in an amorphous phase. As far as (PVD)Zn(O, S) is concerned, the TEM analyses reveal two different microstructures depending on the S-content in the films: for [S]/([O]+[S])= 0.6, the buffer layer is made of ZnO zincite and ZnS wurtzite crystallites grown nearly coherently to each other, with (0002) planes nearly parallel with CIGSe-(112) planes, while for [S]/([O]+[S])= 0.3, it is made of ZnO zincite type crystals with O atoms substituted by S atoms, with (0002) planes perfectly aligned with CIGSe-(112) planes. Such microstructural differences can explain why photovoltaic performances are dependent on the Zn(O, S) buffer layer deposition route.
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Contributor : Richard Baschera <>
Submitted on : Tuesday, April 8, 2014 - 4:35:07 PM
Last modification on : Wednesday, November 6, 2019 - 6:26:11 PM




E. Gautron, M. Buffiere, Sylvie Harel, L. Assmann, Ludovic Arzel, et al.. Microstructural characterization of chemical bath deposited and sputtered Zn(O,S) buffer layers. Thin Solid Films, Elsevier, 2013, 535, pp.175. ⟨10.1016/j.tsf.2012.10.040⟩. ⟨hal-00975462⟩



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