Analysis of carrier injection in Si nanoparticle-SiOx film based MOS devices

Abstract : The electrical properties of silicon rich oxide (SRO) layers integrated in metal-oxide-semiconductor device are analysed. The layers are deposited using the magnetron co-sputtering of a pure SiO2 and Si targets under a pure argon plasma. Each SRO layer embedding silicon nanoparticles (Si-np-SiOx) was subsequently submitted to an optimized annealing treatment. Three types of Al/Si-np-SiOx/p-Si devices are fabricated with different incorporated silicon excesses (9, 11, or 16 at.%) in the active layer. Analysis of static electrical properties of the devices showed a semi-resistive behaviour for each device. Carrier injection into the SiOx matrix in terms of Poole-Frenkel and Fowler-Nordheim mechanisms is analysed in relation with the incorporated silicon excess
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https://hal.archives-ouvertes.fr/hal-00956213
Contributor : Laurent Pichon <>
Submitted on : Thursday, March 6, 2014 - 8:45:57 AM
Last modification on : Thursday, February 7, 2019 - 2:42:43 PM

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Emmanuel Jacques, Laurent Pichon, Christophe Labbé, Larysa Khomenkova, Fabrice Gourbilleau. Analysis of carrier injection in Si nanoparticle-SiOx film based MOS devices. physica status solidi (c), Wiley, 2014, 11 (2), pp.206. ⟨10.1002/pssc.201300379⟩. ⟨hal-00956213⟩

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