High frequency noise characterisation of graphene FET Device

D. Mele (1) , S. Fregonese (2) , Sylvie Lepilliet (1) , E. Pichonat (1) , Gilles Dambrine (1) , H. Happy (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 IMS - Laboratoire de l'intégration, du matériau au système

RF GFET devices have been processed on SiC wafer using Al2O3 as a gate oxide. These devices have been characterised with DC, S parameter and high frequency noise measurement (NF50). The noise parameters have been extracted in order to evaluate the graphene material for RF applications. This GFET shows some potentialities for RF circuits with fT=11.5GHz and NFmin=2.4 dB at 3GHz.

Mots clés: graphene; FET; high frequency noise; LNA; circuit; small signal model

Domaines: Sciences de l'ingénieur [physics]

D. Mele, S. Fregonese, Sylvie Lepilliet, E. Pichonat, Gilles Dambrine, et al.. High frequency noise characterisation of graphene FET Device. 61st IEEE MTT-S International Microwave Symposium, IMS 2013, 2013, Seattle, WA, United States. paper TU3C-1, 4 p., ⟨10.1109/MWSYM.2013.6697561⟩. ⟨hal-00944030⟩