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Article Dans Une Revue Applied Physics Letters Année : 2014

Zr/oxidized diamond interface for high power Schottky diodes

Résumé

High forward current density of 103 A/cm2 (at 6 V) and a breakdown field larger than 7.7 MV/cm for diamond diodes with a pseudo-vertical architecture, are demonstrated. The power figure of merit is above 244 MW/cm2 and the relative standard deviation of the reverse current density over 83 diodes is 10% with a mean value of 10 9 A/cm2. These results are obtained with zirconium as Schottky contacts on the oxygenated (100) oriented surface of a stack comprising an optimized lightly boron doped diamond layer on a heavily boron doped one, epitaxially grown on a Ib substrate. The origin of such performances are discussed.
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Dates et versions

hal-00943411 , version 1 (07-02-2014)

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Aboulaye Traoré, Pierre Muret, Alexandre Fiori, David Eon, Etienne Gheeraert, et al.. Zr/oxidized diamond interface for high power Schottky diodes. Applied Physics Letters, 2014, 104 (5), pp.052105. ⟨10.1063/1.4864060⟩. ⟨hal-00943411⟩
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