A 0-level packaged RF-MEMS switched wideband GaAs LNA MMIC

A. Gustafsson (1) , C. Samuelsson (1) , R. Malmqvist (1) , S. Seok (2) , M. Fryziel (2) , N. Rolland (2) , B. Grandchamp (3) , T. Vähä-Heikkilä (4) , R. Baggen (5)

1 FOI - Swedish Defence Research Agency [Stockholm]
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
3 OMMIC
4 VTT - VTT Technical Research Centre of Finland
5 IMST GmbH

This paper focuses on the design of an RF-MEMS Dicke switched wideband LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The 0- level packaged GaAs MEMS LNA circuit shows 10-17 dB of gain at 16-34 GHz when switched on. The off-state LNA gain is below -6 dB at 5-40 GHz resulting in 20-25 dB of isolation (on and off). To the authors' knowledge, this is the first time a 0-level packaged MEMS switched wideband LNA MMIC with a high gain, isolation, linearity (OIP3≤24 dBm) and low noise figure is presented (NF=2.5-3.0 dB at 15-26 GHz).

Mots clés: Low noise amplifiers; MMIC; packaging; radio frequency micro-electromechanical systems; switches; 0-level package

A. Gustafsson, C. Samuelsson, R. Malmqvist, S. Seok, M. Fryziel, et al.. A 0-level packaged RF-MEMS switched wideband GaAs LNA MMIC. 8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC06-2, 432-435. ⟨hal-00922494⟩