High performance AlGaN metal-semiconductor-metal ultraviolet photo detectors

Sabah Benzeghda (1) , Farida Hobar (2) , Didier Decoster (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 LMI - Laboratoire de recherche microsystèmes et instrumentation

In this paper, we present Al0.25Ga0.75N ultraviolet Schottky barrier photodetectors on Al2O3, that wasmodeled using The two-dimensional device simulator Silvaco and ATLAS. It was found that the device has verylow dark current, with the applied bias below 1 V, the dark current was below 16 pA and the peak responsivity of0.07A/W was achieved at 308nm. We have performed a comparison between our modeling and the experimentalresults

Mots clés: Photodetector; MSM; ultraviolet Schottky barrier photodetectors

Domaines: Sciences de l'ingénieur [physics]

Sabah Benzeghda, Farida Hobar, Didier Decoster. High performance AlGaN metal-semiconductor-metal ultraviolet photo detectors. International Journal of Engineering Sciences and Research Technology, 2013, 2, pp.3333-3336. ⟨hal-00911234⟩