Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks

Renaud Puybaret (1) , John Hankinson (2) , Clément Bouvier (2) , Abdallah Ougazzaden (1) , Paul L Voss (1) , Claire Berger (3, 2) , Walt A de Heer (2)

1 Georgia Tech Lorraine [Metz]
2 School of Physics [Atlanta]
3 NEEL - QuantECA - Circuits électroniques quantiques Alpes

Selective epitaxial graphene growth is achieved in pre-selected areas on the 4H-SiC(0 0 0 -1) C-face with a SiN masking method. The mask decomposes during the growth process leaving a clean, resist free, high temperature annealed graphene surface, in a one-step process. Depending on the off-stoichiometry composition of a Si3 + xN4 mask evaporated on SiC prior to graphitization, the number of layers on the C-face increases (Si-rich) or decreases (N-rich). Graphene grown in masked areas shows excellent quality as observed by Raman spectroscopy, atomic force microscopy and transport data.

Mots clés: graphene SiC

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Renaud Puybaret, John Hankinson, Clément Bouvier, Abdallah Ougazzaden, Paul L Voss, et al.. Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks. Journal of Physics D: Applied Physics, 2015, 48 (15), pp.152001. ⟨10.1088/0022-3727/48/15/152001⟩. ⟨hal-00911211⟩