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Article Dans Une Revue Microelectronics Reliability Année : 2011

Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition

Amrane Oukaour
  • Fonction : Auteur
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B. Tala-Ighil
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B. Pouderoux
  • Fonction : Auteur
M. Tounsi
  • Fonction : Auteur
Mounira Bouarroudj-Berkani
B. Boudart

Résumé

The ageing of power insulated gate bipolar transistor (IGBT) modules is mainly related to thermal and thermomechanical constraints applied to the device. This ageing causes degradation of the device performances and defects appearance which can lead to failures. To avoid these failures, the follow-up of the device operation and the detection of an ageing state remain a priority. This paper presents, at first, ageing tests of 1200 V-30 A IGBT module subjected to power cycling with the aim to highlight online and real-time measurable external indicators of ageing. Secondly, these indicators are used to develop a failure diagnosis method. The diagnosis is realized by artificial training methods based on pattern recognition.
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Dates et versions

hal-00869410 , version 1 (03-10-2013)

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  • HAL Id : hal-00869410 , version 1

Citer

Amrane Oukaour, B. Tala-Ighil, B. Pouderoux, M. Tounsi, Mounira Bouarroudj-Berkani, et al.. Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition. Microelectronics Reliability, 2011, 51, pp.386-391. ⟨hal-00869410⟩
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