Comparison Study on Performances and Reliability between MOSFET & JFET Silicon carbide technologies - Abilities for Aeronautics Application

D Othman (1) , Mounira Berkani (2) , S Lefebvre (2) , Ali Ibrahim (3) , Zoubir Khatir (3) , A Bouzourene (3)

1 TAES - THALES Avionics Electrical Systems
2 SATIE - Systèmes et Applications des Technologies de l'Information et de l'Energie
3 IFSTTAR/LTN - Laboratoire des Technologies Nouvelles

This paper deals with performances and reliability aspects of MOSFET and JFET power transistors devices based on silicon carbide technology. The purpose of this article is to evaluate the abilities and effects of each technology on the conception of power converter for avionic applications. Experimental measurements of steady-on-state resistance dependence and transient performances with temperature are presented and discussed. The second section focuses mainly on robustness aspects of the two types of power transistors in order to analyze their capability to withstand with aeronautic harsh environmental constrains.

Mots clés: ELECTRONIQUE

Domaines: Electronique

D Othman, Mounira Berkani, S Lefebvre, Ali Ibrahim, Zoubir Khatir, et al.. Comparison Study on Performances and Reliability between MOSFET & JFET Silicon carbide technologies - Abilities for Aeronautics Application. Microelectronics Reliability, 2012, 52 (10), pp.1859-1864. ⟨10.1016/j.microrel.2012.06.078⟩. ⟨hal-00868886⟩