Properties of Dy3+-doped Ge-As-Ga-Se chalcogenide glasses

Jing Ren (1) , Guang Yang (1) , Huidan Zeng (1) , Xianghua Zhang (2) , Yunxia Yang (1) , Guorong Chen (1)

1 Key Laboratory for Ultrafine Materials
2 Laboratoire Verres et Céramiques

In the present work, properties of Dy3+-doped chalcogenide glasses as a stoichiometric formula of (0.9−x)GeSe2-xAsSe3/2-0.1GaSe3/2 (x=0.1, 0.2, 0.3, 0.4, 0.5, 0.6) were investigated as a comparison with the previously studied Ge-Ga-Se system. Property measurements include differential thermal analysis, density, Vis-NIR and IR transmission spectra, and fluorescent emission spectra. Judd-Ofelt analysis was performed using the calculated oscillator strengths of glasses. All properties of glasses show obvious dependence on compositions. Especially, the improved devitrification resistance and the longer fluorescence life at 1.34 μm emission were observed with the increasing As content. Noticeably, abnormal changes in some properties occurred to the glass whose average coordination number corresponds to the threshold of two-dimensional-three-dimensional topological phase transition.

Domaines: Matériaux

Jing Ren, Guang Yang, Huidan Zeng, Xianghua Zhang, Yunxia Yang, et al.. Properties of Dy3+-doped Ge-As-Ga-Se chalcogenide glasses. Journal of the American Ceramic Society, 2006, 89 (8), pp.2486-2491. ⟨10.1111/j.1551-2916.2006.01070.x⟩. ⟨hal-00867553⟩