Evidence for the role of normal-state electrons in nanoelectromechanical damping mechanisms at very low temperatures

Abstract : We report on experiments performed at low temperatures on aluminum covered silicon nanoelectromechanical resonators. The substantial difference observed between the mechanical dissipation in the normal and superconducting states measured within the same device unambiguously demonstrates the importance of normal-state electrons in the damping mechanism. The dissipative component becomes vanishingly small at very low temperatures in the superconducting state, leading to exceptional values for the quality factor of such small silicon structures. A critical discussion is given within the framework of the standard tunneling model
Type de document :
Article dans une revue
Physical Review Letters, American Physical Society, 2013, 110 (17), pp.177206. 〈10.1103/PhysRevLett.110.177206〉
Liste complète des métadonnées

Littérature citée [32 références]  Voir  Masquer  Télécharger

https://hal.archives-ouvertes.fr/hal-00861797
Contributeur : Olivier Bourgeois <>
Soumis le : mardi 17 décembre 2013 - 15:43:36
Dernière modification le : mercredi 22 août 2018 - 01:01:40
Document(s) archivé(s) le : lundi 17 mars 2014 - 22:06:54

Fichier

Dissipe_v6.pdf
Fichiers produits par l'(les) auteur(s)

Identifiants

Collections

NEEL | UGA

Citation

Kunal Lulla, Martial Defoort, Christophe Blanc, Olivier Bourgeois, Eddy Collin. Evidence for the role of normal-state electrons in nanoelectromechanical damping mechanisms at very low temperatures. Physical Review Letters, American Physical Society, 2013, 110 (17), pp.177206. 〈10.1103/PhysRevLett.110.177206〉. 〈hal-00861797〉

Partager

Métriques

Consultations de la notice

186

Téléchargements de fichiers

342