Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)

Karine Hestroffer (1) , Cedric Leclere (2) , Catherine Bougerol (3) , Hubert Renevier (2) , B. Daudin (1)

1 SP2M - UMR 9002 - Service de Physique des Matériaux et Microstructures
2 LMGP - Laboratoire des matériaux et du génie physique
3 NEEL - NPSC - Nanophysique et Semiconducteurs

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Karine Hestroffer, Cedric Leclere, Catherine Bougerol, Hubert Renevier, B. Daudin. Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111). Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84 (24), pp.245302. ⟨10.1103/PhysRevB.84.245302⟩. ⟨hal-00858015⟩