In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

Karine Hestroffer (1) , Cedric Leclere (2) , V. Cantelli (3) , Catherine Bougerol (4) , Hubert Renevier (2) , B. Daudin (1)

1 SP2M - UMR 9002 - Service de Physique des Matériaux et Microstructures
2 LMGP - Laboratoire des matériaux et du génie physique
3 NRS - Nanostructures et Rayonnement Synchrotron
4 NEEL - NPSC - Nanophysique et Semiconducteurs

Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy is studied through a combination of two in situ tools: grazing incidence x-ray diffraction and reflection high energy electron diffraction. Growth on bare Si(111) and on AlN/Si(111) is compared. A significantly larger delay at nucleation is observed for nanowires grown on bare Si(111). The difference in the nucleation delay is correlated to a dissimilarity of chemical reactivity between Al and Ga with nitrided Si(111).

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Karine Hestroffer, Cedric Leclere, V. Cantelli, Catherine Bougerol, Hubert Renevier, et al.. In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 2012, 100, pp.212107. ⟨10.1063/1.4721521⟩. ⟨hal-00857977⟩