In-Plane Magnetic Anisotropy and Temperature Dependence of Switching Field in (Ga, Mn) as Ferromagnetic Semiconductors

Souleymane Kamara (1) , Ferial Terki (1) , Salam Charar (1) , Mourad Dehbaoui (1) , J. Sadowski , Rose-Marie Galéra (2)

1 PEPS - Physique de l'Exciton, du Photon et du Spin
2 NEEL - MagSup - Magnétisme et Supraconductivité

We explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Planar Hall Effect (PHE) measurements. Using low magnitude of applied magnetic field (i.e., when the magnitude H is smaller than both cubic H-c and uniaxial H-u anisotropy field), we have observed various shapes of applied magnetic field direction dependence of Planar Hall Resistance (PHR). In particular, in two regions of temperature. At T < T-C/2, the "square-shape" signal and at T > T-C/2 the "zigzag-shape" signal of PHR. They reflect different magnetic anisotropy and provide information about magnetization reversal process in GaMnAs ferromagnetic semiconductor. The theoretical model calculation of PHR based on the free energy density reproduces well the experimental data. We report also the temperature dependence of anisotropy constants and magnetization orientations. The transition of easy axis from biaxial to uniaxiale axes has been observed and confirmed by SQUID measurements.

Domaines: Electrons fortement corrélés [cond-mat.str-el]

Souleymane Kamara, Ferial Terki, Salam Charar, Mourad Dehbaoui, J. Sadowski, et al.. In-Plane Magnetic Anisotropy and Temperature Dependence of Switching Field in (Ga, Mn) as Ferromagnetic Semiconductors. Journal of Nanoscience and Nanotechnology, 2012, 12, pp.4868-4873. ⟨10.1166/j.nanosciencenanotecnology.2012.4923⟩. ⟨hal-00844078⟩