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Optimization of AlN/GaN double-barrier resonant-tunnelling diode based on the non-equilibrium Green's function formalism

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https://hal.archives-ouvertes.fr/hal-00807607
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Submitted on : Thursday, April 4, 2013 - 9:20:25 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:14 PM

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  • HAL Id : hal-00807607, version 1

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M. Boucherit, A. Soltani, Michel Rousseau, J.L. Farvaque, Jean-Claude de Jaeger. Optimization of AlN/GaN double-barrier resonant-tunnelling diode based on the non-equilibrium Green's function formalism. 9th International Conference on Nitride Semiconductors, ICNS-9, 2011, Glasgow, United Kingdom. ⟨hal-00807607⟩

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