Raman Imaging in Semiconductor Physics: Applications to Microelectronic Materials and Devices

Antoine Tiberj (1) , Jean Camassel (1)

1 L2C - Laboratoire Charles Coulomb

The unique versatility of micro-Raman spectroscopy (μRS) in semicon- ductor physics remains in Raman imaging. Numerous applications cover the whole development of modern electronic and optoelectronic devices: from semiconduc- tor growth to advanced device inspection tools. In this chapter, a wide variety of semiconductors (SiC, graphene, GaN, GaAs, SiGe, strained Si, sSOI, SGOI) and devices (FETs, lasers, MEMS) are addressed. First, it will be shown how Raman mapping enables to check the crystalline quality, the composition, the doping, and the uniformity of as-grown semiconductors. Then, we will focus on the most popular application in microelectronics: strain measurements either at the device or at the full wafer scale. Finally, we will show how μRS imaging can be used for final device inspection through the temperature mapping of operating devices (FETs, lasers, actuators).

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Antoine Tiberj, Jean Camassel. Raman Imaging in Semiconductor Physics: Applications to Microelectronic Materials and Devices. Raman Imaging Techniques and Applications, Springer Berlin Heidelberg, pp.ISBN: 978-3-642-28251-5, 2012, ⟨10.1007/978-3-642-28252-2⟩. ⟨hal-00803592⟩