Exciton localization on basal stacking faults in a-plane GaN probed by picosecond time-resolved cathodoluminescence.

Pierre Corfdir (1) , Pierre Lefebvre (2) , J. Ristic (3) , Amélie Dussaigne (1) , Samuel Sonderegger (1) , Denis Martin (1) , Jean-Daniel Ganière (1) , N. Grandjean (1) , Benoit Deveaud-Plédran (1)

1 Institute of Condensed Matter Physics [Lausanne]
2 L2C - Laboratoire Charles Coulomb
3 Institut de Photonique et d'Electronique Quantiques

We examine the capture dynamics of excitons by basal stacking faults in a-plane GaN by using time-resolved CL.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Pierre Corfdir, Pierre Lefebvre, J. Ristic, Amélie Dussaigne, Samuel Sonderegger, et al.. Exciton localization on basal stacking faults in a-plane GaN probed by picosecond time-resolved cathodoluminescence.. Int. Conf. On Optics of Excitons in Confined Systems - OECS11., Sep 2009, Madrid, Spain. ⟨hal-00797193⟩