Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers

Thanh Tra Nguyen (1) , Cédric Robert Robert (1) , Antoine Létoublon (1) , Charles Cornet (1) , Thomas Quinci (1) , Emmanuel Giudicelli (1) , Samy Almosni (1) , Nathalie Boudet (2) , Anne Ponchet (3) , Jithesh Kuyyalil (1) , Mihai Danila (4) , Olivier Durand (1) , Nicolas Bertru (1) , Alain Le Corre (1)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON
2 NEEL - CRG - CRG & Grands instruments
3 CEMES - Centre d'élaboration de matériaux et d'études structurales
4 National Institute for Research and Development in Microtechnologies - IMT

In the context of III-V monolithic integration on silicon, synchrotron X-ray diffraction has been employed in this study using a bi-dimensional large area hybrid pixel detector (XPAD third generation) to characterize defects in the GaP layers. Despite a very coherent interface (low plastic relaxation) of GaP/Si, 2 types of defect are detected. Micro-twins contributions are evidenced and quantitatively evaluated from additional reflections analysis. Antiphase domains are evidenced using the Williamson-Hall-like plot method applied to transverse scans extracted directly from single XPAD images taken on specular GaP reflections.

Mots clés: X-ray diffraction; Synchrotron; Planar defects; Si; GaP; Microtwins; Antiphase domains

Domaines: Optique / photonique

Thanh Tra Nguyen, Cédric Robert Robert, Antoine Létoublon, Charles Cornet, Thomas Quinci, et al.. Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers. Thin Solid Films, 2013, Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III, 541, pp.36-40. ⟨10.1016/j.tsf.2012.11.116⟩. ⟨hal-00788396⟩