Role of hydration on the electronic transport through molecular junctions on silicon

N. Clement (1) , David Guérin (1) , S. Pleutin (1) , S. Godey (1) , D. Vuillaume (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Molecular electronics is a fascinating area of research with the ability to tune device properties by a chemical tailoring of organic molecules. However, molecular electronics devices often suffer from dispersion and lack of reproducibility of their electrical performances. Here, we show that water molecules introduced during the fabrication process or coming from the environment can strongly modify the electrical transport properties of molecular junctions made on hydrogen-terminated silicon. We report an increase in conductance by up to three orders of magnitude, as well as an induced asymmetry in the current-voltage curves. These observations are correlated with a specific signature of the dielectric response of the monolayer at low frequency. In addition, a random telegraph signal is observed for these junctions with macroscopic area. Electrochemical charge transfer reaction between the semiconductor channel and H+/H2 redox couple is proposed as the underlying phenomenon. Annealing the samples at 150°C is an efficient way to suppress these water-related effects. This study paves the way to a better control of molecular devices and has potential implications when these monolayers are used as hydrophobic layers or incorporated in chemical sensors

Mots clés: Molecular electronics; electronic transport; molecular tunnel junction; redox couple; alkene molecules on silicon; water influence; SAMs

Domaines: Chimie-Physique [physics.chem-ph]; Micro et nanotechnologies/Microélectronique

N. Clement, David Guérin, S. Pleutin, S. Godey, D. Vuillaume. Role of hydration on the electronic transport through molecular junctions on silicon. Journal of Physical Chemistry C, 2012, 116 (33), pp.17753-17763. ⟨10.1021/jp3018106⟩. ⟨hal-00787370⟩