Semibulk InGaN: a Novel Approach for Thick, Single Phase, Epitaxial InGaN Layers Grown by MOVPE

K. Pantzas (1) , Y. El Gmili (1) , J. Dickerson , S. Gautier (2) , C. Bishop , A. Ahaitouf (1) , T. Moudakir (1) , S. Sundaram (1) , G. Orsal (1, 2) , P.L. Voss (1) , A. Ougazzaden (1)

1 UMI GT CNRS
2 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes

Domaines: Physique [physics]

K. Pantzas, Y. El Gmili, J. Dickerson, S. Gautier, C. Bishop, et al.. Semibulk InGaN: a Novel Approach for Thick, Single Phase, Epitaxial InGaN Layers Grown by MOVPE. ICMOVPE-XVI, May 2012, Busan, South Korea. ⟨hal-00785001⟩