Skip to Main content Skip to Navigation
Conference papers

4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes

Abstract : This paper presents a study of 4H-SiC UV photodetectors based on p +n thin junctions. Two kinds of p + layers have been implemented, aiming at studying the influence of the junction elaborated by the ion implantation process (and the subsequent annealing) on the device characteristics. Aluminum and Boron dopants have been introduced by beam line and by plasma ion implantation, respectively. Dark currents are lower with Al-implanted diodes (2 pA/cm 2 @ - 5 V). Accordingly to simulation results concerning the influence of the junction thickness and doping, plasma B-implanted diodes give rise to the best sensitivity values (1.5×10 -1 A/W @ 330 nm).
Document type :
Conference papers
Complete list of metadata

https://hal.archives-ouvertes.fr/hal-00747301
Contributor : Publications Ampère <>
Submitted on : Wednesday, October 31, 2012 - 12:33:17 AM
Last modification on : Monday, September 13, 2021 - 2:44:02 PM

Identifiers

  • HAL Id : hal-00747301, version 1

Citation

Stéphane Biondo, Laurent Ottaviani, Mihai Lazar, Dominique Planson, Julian Duchaine, et al.. 4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747301⟩

Share

Metrics

Record views

677