SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements

Mihai Lazar (1) , François Jomard (2) , Duy Minh Nguyen (1) , Christophe Raynaud (1) , Gontran Pâques (3) , Sigo Scharnholz (3) , Dominique Tournier (1) , Dominique Planson (1)

1 EE - Ampère, Département Energie Electrique
2 GEMAC - Groupe d'Etude de la Matière Condensée
3 ISL - Institut franco-allemand de recherches de Saint-Louis

4H-SiC vertical bipolar power diodes have been fabricated with bilayer metallic anode contact based on an Al-Ti-Ni ohmic contact and a thick Al over-metallization. An optical window of 100 × 100 μm 2 has been created through the anode contact with a SIMS Cameca IMS 4F equipment using Cs + primary ions at 10 kV and with a beam spot size of 500 nm. The current/voltage characteristics of the diodes show that the SIMS process does not induce an increase of the leakage currents in forward nor in reverse bias. OBIC UV photogeneration occurs under the optical window and not under the contact metal.

Mots clés: Ionization coefficient; 4H-SiC; optical window; impact ionization coefficients; bipolar diode; OBIC; SIMS

Domaines: Energie électrique

Mihai Lazar, François Jomard, Duy Minh Nguyen, Christophe Raynaud, Gontran Pâques, et al.. SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements. ICSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747300⟩