Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application

Dhouha Othman (1, 2, 3) , Mounira Bouarroudj-Berkani , Stéphane Lefebvre (1) , Zoubir Khatir (2) , Ali Ibrahim (2) , Arezki Bouzourene (3)

1 SATIE - Systèmes et Applications des Technologies de l'Information et de l'Energie
2 IFSTTAR/LTN - Laboratoire des Technologies Nouvelles
3 Thales Research and Technology [Palaiseau]

This paper deals with performances and reliability aspects of MOSFET and JFET power transistors devices based on silicon carbide technology. The purpose of this article is to evaluate the abilities and effects of each technology on the conception of power converter for avionic applications. Experimental measurements of steady-on-state resistance dependence and transient performances with temperature are presented and discussed. The second section focuses mainly on robustness aspects of the two types of power transistors in order to analyze their capability to withstand with aeronautic harsh environmental constrains

Mots clés: SiC; robustness; Aeronitics converters; JFET; MOSFET

Domaines: Energie électrique; Electronique

Dhouha Othman, Mounira Bouarroudj-Berkani, Stéphane Lefebvre, Zoubir Khatir, Ali Ibrahim, et al.. Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application. Microelectronics Reliability, 2012, 52 (9-10), pp.1859-1864. ⟨hal-00739653⟩