Interface states effects in GaN Schottky diodes

A. Ahaitouf 1 H. Srour 2 S. Ould Saad Hamady 2 N. Fressengeas 2 A. Ougazzaden 1 J.P. Salvestrini 3
1 UMI GT CNRS
2 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes
3 T1
UMI GT CNRS
Document type :
Journal articles
Complete list of metadatas
https://hal.archives-ouvertes.fr/hal-00720225
Contributor : Jean Paul Salvestrini <>
Submitted on : Tuesday, July 24, 2012 - 10:10:10 AM
Last modification on : Monday, January 20, 2020 - 3:18:25 PM

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  • HAL Id : hal-00720225, version 1

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CNRS | CENTRALESUPELEC | LMOPS-AXE1 | UNIV-LORRAINE | SUPELEC | SUP_LMOPS | UNIV-PARIS-SACLAY | LMOPS-MATERIAUX

Citation

A. Ahaitouf, H. Srour, S. Ould Saad Hamady, N. Fressengeas, A. Ougazzaden, et al.. Interface states effects in GaN Schottky diodes. Thin Solid Films, Elsevier, 2012. ⟨hal-00720225⟩

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