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Journal articles
Interface states effects in GaN Schottky diodes
A. Ahaitouf 1
Author
H. Srour 2
Author
S. Ould Saad Hamady 2
Author IdHAL : sidi-ould-saad-hamady ResearcherId : http://www.researcherid.com/rid/C-8386-2016 ORCID : https://orcid.org/0000-0002-0480-6381
N. Fressengeas 2
Author IdHAL : fresseng ResearcherId : http://www.researcherid.com/rid/B-9982-2012 ORCID : https://orcid.org/0000-0002-5534-712X
A. Ougazzaden 1
Author
J.P. Salvestrini 3
Author IdHAL : jean-paul-salvestrini
1
UMI GT CNRS (France)
- Georgia Institute of Technology [Atlanta] (North Avenue, Atlanta, GA 30332 - United States)
- CNRS - Centre National de la Recherche Scientifique : UMR (France)
2
LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes (Université de Lorraine - CentraleSupélec, 2 rue Edouard Belin, 57070 Metz - France)
- CentraleSupélec (3, rue Joliot Curie, Plateau de Moulon, 91192 GIF-SUR-YVETTE Cedex - France)
- UL - Université de Lorraine : EA4423 (34 cours Léopold - CS 25233 - 54052 Nancy cedex - France)
3
T1 (France)
- UMI GT CNRS (France)
- Georgia Institute of Technology [Atlanta] (North Avenue, Atlanta, GA 30332 - United States)
- CNRS - Centre National de la Recherche Scientifique : UMR (France)
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Journal articles
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Complete list of metadatas
https://hal.archives-ouvertes.fr/hal-00720225
Contributor : Jean Paul Salvestrini <>
Submitted on : Tuesday, July 24, 2012 - 10:10:10 AM
Last modification on : Tuesday, October 20, 2020 - 2:49:06 PM
Contributor : Jean Paul Salvestrini <>
Submitted on : Tuesday, July 24, 2012 - 10:10:10 AM
Last modification on : Tuesday, October 20, 2020 - 2:49:06 PM
Identifiers
- HAL Id : hal-00720225, version 1
- DOI : 10.1016/j.tsf.2012.08.029
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Citation
A. Ahaitouf, H. Srour, S. Ould Saad Hamady, N. Fressengeas, A. Ougazzaden, et al.. Interface states effects in GaN Schottky diodes. Thin Solid Films, Elsevier, 2012, 522, pp.345-351. ⟨10.1016/j.tsf.2012.08.029⟩. ⟨hal-00720225⟩
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