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Interface states effects in GaN Schottky diodes

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https://hal.archives-ouvertes.fr/hal-00720225
Contributor : Jean Paul Salvestrini <>
Submitted on : Tuesday, July 24, 2012 - 10:10:10 AM
Last modification on : Tuesday, October 20, 2020 - 2:49:06 PM

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A. Ahaitouf, H. Srour, S. Ould Saad Hamady, N. Fressengeas, A. Ougazzaden, et al.. Interface states effects in GaN Schottky diodes. Thin Solid Films, Elsevier, 2012, 522, pp.345-351. ⟨10.1016/j.tsf.2012.08.029⟩. ⟨hal-00720225⟩

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