Excimer laser activation of ultra-shallow junctions in doped Si: real time process monitoring by direct reflectometry

Nadjib Semmar (1) , Mohamed Darif (1) , Eric Millon (1) , Agnes Petit (1) , Hasnaa Etienne (2) , Philippe Delaporte (3)

1 GREMI - Groupe de recherches sur l'énergétique des milieux ionisés
2 Ion Beam Service
3 LP3 - Laboratoire Lasers, Plasmas et Procédés photoniques

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Nadjib Semmar, Mohamed Darif, Eric Millon, Agnes Petit, Hasnaa Etienne, et al.. Excimer laser activation of ultra-shallow junctions in doped Si: real time process monitoring by direct reflectometry. E-MRS 2012 Spring Meeting, May 2012, Strasbourg, France. ⟨hal-00709949⟩