Carbon reaction with levitated silicon - Experimental and thermodynamic approaches

M. Beaudhuin (1, 2) , G. Chichignoud (1) , P. Bertho (1) , T. Duffar (1) , M. Lemiti (3) , K. Zaidat (1)

1 SIMaP - Science et Ingénierie des Matériaux et Procédés
2 ICGM ICMMM - Institut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier
3 INL - PV - INL - Photovoltaïque

Metallurgical grade silicon (MG-Si) has become a new source of raw material for the photovoltaic industry. The use of this material as an alternative feed stock has however introduced phenomena that are detrimental to both the yield of the manufacturing process and the performance of the photovoltaic cells produced. This is mainly related to the presence of carbon, which precipitates to silicon carbide (SiC) in the ingot. This article focuses on the effect of carbon on silicon nucleation. Statistical experimental results of silicon nucleation are obtained as a function of carbon concentration and are presented and compared to thermodynamic calculations.

Mots clés: Carbide; Precipitation; Nucleation; Semiconductors

Domaines: Cristallographie

M. Beaudhuin, G. Chichignoud, P. Bertho, T. Duffar, M. Lemiti, et al.. Carbon reaction with levitated silicon - Experimental and thermodynamic approaches. Materials Chemistry and Physics, 2012, 133, pp.284-288. ⟨10.1016/j.matchemphys.2012.01.023⟩. ⟨hal-00679550⟩