High-temperature die-attaches for SiC power devices

Amandine Masson (1) , Cyril Buttay (1) , Hervé Morel (1) , Christophe Raynaud (1) , Stanislas Hascoët (1) , Laurent Gremillard (2)

1 AMPERE - Ampère
2 MATEIS - Matériaux, ingénierie et science [Villeurbanne]

SiC devices have been substituted to Si dies for high temperature applications. However, classical packagings are not adapted for harsh environment and new solutions for back-side die attach must be envisaged. In this paper, theoretical basis and results for nano-silver sintering Transient Liquid Phase Bonding will be presented.

Mots clés: High temperature electronics; Nanotechnology; Packaging; Reliability; Silicon carbide; Harsh environment; High temperature; High-temperature electronics; Nano silver; New solutions; Power devices; SiC devices; Theoretical basis; Transient liquid phase bonding

Domaines: Energie électrique

Amandine Masson, Cyril Buttay, Hervé Morel, Christophe Raynaud, Stanislas Hascoët, et al.. High-temperature die-attaches for SiC power devices. EPE, Aug 2011, Birmingham, United Kingdom. pp.Article number 6020161. ⟨hal-00672602⟩