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Investigation of single event burnout sensitive depth in power MOSFETS

Abstract : The depth of the Single-event burnout sensitive volume of power MOSFETs is investigated using TCAD simulation and TPA laser testing approaches.
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https://hal.archives-ouvertes.fr/hal-00667364
Contributor : Frédéric Darracq <>
Submitted on : Tuesday, February 7, 2012 - 2:54:05 PM
Last modification on : Thursday, July 25, 2019 - 4:34:16 PM

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  • HAL Id : hal-00667364, version 1

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Frédéric Darracq, V. Pouget, D. Lewis, P. Fouillat, E. Lorfèvre, et al.. Investigation of single event burnout sensitive depth in power MOSFETS. 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS),, Sep 2009, Bruges, Belgium. pp.106 - 111. ⟨hal-00667364⟩

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