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Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour

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https://hal.archives-ouvertes.fr/hal-00661511
Contributor : Publications Ampère <>
Submitted on : Thursday, January 19, 2012 - 5:24:52 PM
Last modification on : Monday, September 13, 2021 - 2:44:02 PM

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Stéphane Biondo, Mihai Lazar, Laurent Ottaviani, Wilfried Vervisch, Olivier Palais, et al.. Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.114-117, ⟨10.4028/www.scientific.net/MSF.711.114⟩. ⟨hal-00661511⟩

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