Seeding layer influence on the low temperature photoluminescence intensity of 3C-SiC grown on 6H-SiC by sublimation epitaxy

Georgios Zoulis , J. Sun , R. Vasiliauskas , J. Lorenzzi , Hervé Peyre (1) , M. Syvajarvi , G. Ferro , Sandrine Juillaguet (1) , R. Yakimova , Jean Camassel (1)

1 L2C - Laboratoire Charles Coulomb

We report on n-type 3C-SiC samples grown by sublimation epitaxy. We focus on the low temperature photoluminescence intensity and show that the presence of a first conversion layer, grown at low temperature, is not only beneficial to improve the homogeneity of the polytype conversion but, also, to the LTPL signal intensity. From the use of a simple model, we show that this comes from a reduced density of non-radiative recombination centers.

Mots clés: 3C-SiC; Al doping; sublimation epitaxy; Low temperature photoluminescence

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Georgios Zoulis, J. Sun, R. Vasiliauskas, J. Lorenzzi, Hervé Peyre, et al.. Seeding layer influence on the low temperature photoluminescence intensity of 3C-SiC grown on 6H-SiC by sublimation epitaxy. HETEROSIC & WASMPE 2011, Jun 2011, TOURS, France. pp.149-153, ⟨10.4028/www.scientific.net/MSF.711.149⟩. ⟨hal-00655917⟩