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Communication Dans Un Congrès Année : 2011

Study of Metallic Interfaces Etching for High-K Metal Gate stacks in CMOS 28 nm Technology

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hal-00649913 , version 1 (09-12-2011)

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  • HAL Id : hal-00649913 , version 1

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F. Chave, L. Vallier, P. Gouraud, S. Baudot, C. Petit-Etienne, et al.. Study of Metallic Interfaces Etching for High-K Metal Gate stacks in CMOS 28 nm Technology. AVS 58th International Symposium and Exhibition, Oct 2011, Nashville, United States. ⟨hal-00649913⟩
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