Porous SiOCH integration: etch challenges with a trench first metal hard mask approach

Nicolas Possémé (1) , Thibaut David (1) , Thierry Chevolleau (2) , Maxime Darnon (2) , Philippe Brun (1) , Marc Guillermet (1) , Jean Pierre Oddou (3) , Sébastien Barnola (1) , Fanny Bailly (3) , Régis Bouyssou (3) , Julien Ducote (2) , Romain Hurand (1) , Christophe Vérove (3) , Olivier R. Joubert (2)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 LTM - Laboratoire des technologies de la microélectronique
3 ST-CROLLES - STMicroelectronics [Crolles]

The use of a metallic hard mask approach for porous dielectric film integration implies for patterning processes, different difficulties like dimensional control, bottom line roughness and residue formation or chamber conditioning. In this paper we propose to present these issues and associated solutions for p-SiOCH integration in dual damascene structure using a trench first metallic hard mask approach.

Domaines: Sciences de l'ingénieur [physics]

Nicolas Possémé, Thibaut David, Thierry Chevolleau, Maxime Darnon, Philippe Brun, et al.. Porous SiOCH integration: etch challenges with a trench first metal hard mask approach. ECS Transactions, 2011, 34, pp.389. ⟨10.1149/1.3567609⟩. ⟨hal-00647490⟩