Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

N. Reckinger (1) , C. Poleunis (1) , Emmanuel Dubois (2) , C.A. Dutu (1) , X.H. Tang (1) , A. Delcorte (1) , J.P. Raskin (1)

1 UCL - Université Catholique de Louvain = Catholic University of Louvain
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2−x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi2–x/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH can be further reduced. This process enables the formation of very low effective SBH ErSi2–x/n-Si contacts with a low thermal budget

Domaines: Electronique

N. Reckinger, C. Poleunis, Emmanuel Dubois, C.A. Dutu, X.H. Tang, et al.. Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation. Applied Physics Letters, 2011, 99 (1), pp.012110. ⟨10.1063/1.3608159⟩. ⟨hal-00639859⟩