Radiative Recombination Limited Lifetimes in a-plane (Al,Ga)N/GaN single quantum wells grown on GaN.

Pierre Corfdir (1) , Amélie Dussaigne (1) , Pierre Lefebvre (2, 3) , H. Teisseyre (4) , Tadeusz Suski (4) , Izabella Grzegory (4) , Jean-Daniel Ganière (1) , N. Grandjean (1) , Benoit Deveaud-Plédran (1)

1 Institute of Condensed Matter Physics [Lausanne]
2 ETSI Telecomunicacion - Departamento de Ingeniería Electrónica and ISOM
3 GES - Groupe d'étude des semiconducteurs
4 IHPP - Institute of High Pressure Physics [Warsaw]

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Pierre Corfdir, Amélie Dussaigne, Pierre Lefebvre, H. Teisseyre, Tadeusz Suski, et al.. Radiative Recombination Limited Lifetimes in a-plane (Al,Ga)N/GaN single quantum wells grown on GaN.. International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States. ⟨hal-00633505⟩