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Capacitive behavior of pentacene-based diodes: Quasistatic dielectric constant and dielectric strength

Abstract : The capacitive behavior of pentacene films was investigated in the metal-semiconductor-metal (MSM) diode structure. Impedance analysis of diodes with a thick pentacene layer up to 1012 nm showed a full depletion of the organic layer. This observation allowed us to regard the MSM diode as a parallel-plate capacitor in the reverse-bias regime without current flow. Under forward-bias, the diode was evaluated through frequency-dependent impedance measurements by using an equivalent circuit composed of a single parallel resistance-capacitance circuit. The analysis of the data in both the reverse and forward bias regime led us to electrical methods for quantifying dielectric properties of pentacene.
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https://hal.archives-ouvertes.fr/hal-00605026
Contributor : Chang-Hyun Kim <>
Submitted on : Thursday, June 30, 2011 - 1:26:58 PM
Last modification on : Thursday, March 5, 2020 - 6:19:20 PM
Long-term archiving on: : Saturday, October 1, 2011 - 2:23:18 AM

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Chang Hyun Kim, Omid Yaghmazadeh, Denis Tondelier, Yong Bin Jeong, Yvan Bonnassieux, et al.. Capacitive behavior of pentacene-based diodes: Quasistatic dielectric constant and dielectric strength. Journal of Applied Physics, American Institute of Physics, 2011, 109, pp.083710. ⟨hal-00605026⟩

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