30-band k.p method for quantum semiconductor heterostructures

Abstract : We illustrate how the linear combination of zone center bulk bands combined with the full-zone k*p method can be used to accurately compute the electronic states in semiconductor nanostructures. To this end we consider a recently developed 30-band model which carefully reproduces atomistic calculations and experimental results of bulk semiconductors. The present approach is particularly suited both for short-period superlattices and large nanostructures where a three-dimensional electronic structure is required. This is illustrated by investigating ultrathin GaAs/ AlAs superlattices.
Document type :
Journal articles
Complete list of metadatas

Cited literature [1 references]  Display  Hide  Download

https://hal.archives-ouvertes.fr/hal-00604845
Contributor : Soline Boyer <>
Submitted on : Monday, November 28, 2016 - 3:07:45 PM
Last modification on : Thursday, November 15, 2018 - 11:57:00 AM
Long-term archiving on : Tuesday, March 21, 2017 - 10:44:06 AM

File

ApplPhysLett_98_251913 (1).pdf
Publisher files allowed on an open archive

Identifiers

Citation

Soline Richard, Faycal Raouafi, Alexandre Bondi, Laurent Pedesseau, Claudine Katan, et al.. 30-band k.p method for quantum semiconductor heterostructures. Applied Physics Letters, American Institute of Physics, 2011, 98, pp.251913. ⟨10.1063/1.3600643⟩. ⟨hal-00604845⟩

Share

Metrics

Record views

504

Files downloads

652