30-band k.p method for quantum semiconductor heterostructures

Abstract : We illustrate how the linear combination of zone center bulk bands combined with the full-zone k*p method can be used to accurately compute the electronic states in semiconductor nanostructures. To this end we consider a recently developed 30-band model which carefully reproduces atomistic calculations and experimental results of bulk semiconductors. The present approach is particularly suited both for short-period superlattices and large nanostructures where a three-dimensional electronic structure is required. This is illustrated by investigating ultrathin GaAs/ AlAs superlattices.
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Soline Richard, Faycal Raouafi, Alexandre Bondi, Laurent Pedesseau, Claudine Katan, et al.. 30-band k.p method for quantum semiconductor heterostructures. Applied Physics Letters, American Institute of Physics, 2011, 98, pp.251913. ⟨10.1063/1.3600643⟩. ⟨hal-00604845⟩



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