Investigation of hysteresis memory effects in SOI FinFETs with ONO buried insulator.

S.-J. Chang , K.-I. Na , M. Bawedin (1) , Y.-H. Bae , K.-H. Park , J.-H. Lee (2) , W. Xiong , S. Cristoloveanu (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 Institute of Precision Engineering

Domaines: Autre [cond-mat.other]

S.-J. Chang, K.-I. Na, M. Bawedin, Y.-H. Bae, K.-H. Park, et al.. Investigation of hysteresis memory effects in SOI FinFETs with ONO buried insulator.. 2010 IEEE International SOI Conference, Oct 2010, San Diego, California, United States. ⟨hal-00604643⟩