The isotopic comparative method (ICM) for SIMS quantification of boron in silicon up to 40 at.%

C. Dubois; G. Prudon; J.C. Dupuy; B. Gautier; B. Canut; Y. Legall; T. Kociniewski

Conference Papers Year : 2009

The isotopic comparative method (ICM) for SIMS quantification of boron in silicon up to 40 at.%

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1

C. Dubois

Function : Author

Institut d'Electronique du Solide et des Systèmes

G. Prudon

Function : Author

J.C. Dupuy

Function : Author

B. Gautier

Function : Author

B. Canut

Function : Author

Y. Legall

Function : Author

Institut d'Electronique du Solide et des Systèmes

T. Kociniewski

Function : Author

Marie-Anne Jung : Connect in order to contact the contributor

https://hal.science/hal-00597364

Submitted on : Tuesday, May 31, 2011-4:32:54 PM

Last modification on : Friday, March 24, 2023-2:52:54 PM

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hal-00597364 , version 1 (31-05-2011)

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C. Dubois, G. Prudon, J.C. Dupuy, B. Gautier, B. Canut, et al.. The isotopic comparative method (ICM) for SIMS quantification of boron in silicon up to 40 at.%. 17th International Conference on Secondary Ion Mass Spectrometry (SIMS XVII), Sep 2009, Toronto, Canada. ⟨hal-00597364⟩

The isotopic comparative method (ICM) for SIMS quantification of boron in silicon up to 40 at.%

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