Preliminary results of storage accelerated aging test on InP/InGaAs DHBT

Abstract : We report on the reliability of InP HBT technology which has applications in very high-speed ICs. This work presents the storage accelerated aging tests results performed on InP/InGaAs HBT at stress temperatures of 180, 210 and 240 C up to 3000 h. We have performed aging tests for two generations of InP HBT which differ from the collector doping level and from material used for planarization. From the Gummel plots, we note that the major degradation mechanism is located at the base-emitter junction periphery. Investigations on the physical origin of the observed failure mechanism has been performed using TCAD simulations.
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Article dans une revue
Microelectronics Reliability, Elsevier, 2010, 50, pp.1548-1553. 〈10.1016/j.microrel.2010.07.141〉
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https://hal.archives-ouvertes.fr/hal-00585073
Contributeur : Chrystel Plumejeau <>
Soumis le : lundi 11 avril 2011 - 16:29:30
Dernière modification le : jeudi 11 janvier 2018 - 06:21:09

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Gilles Amadou Koné, Brice Grandchamp, Cyril Hainaut, François Marc, Cristell Maneux, et al.. Preliminary results of storage accelerated aging test on InP/InGaAs DHBT. Microelectronics Reliability, Elsevier, 2010, 50, pp.1548-1553. 〈10.1016/j.microrel.2010.07.141〉. 〈hal-00585073〉

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