Failure Analysis of IGBT under High Temperature, High Current Density and High Switching Speed. Step 1 : Background and State of the Art of the IGBT
Résumé
The objective of the present project is to investigate the limit of the SOA of the IGBT designed by Toyota Motor associated to Toyota CRDL Inc, in Aichi (Japan) for HEV application. The characteristics of this new device are: Trench IGBT chip, 900V voltage rating and 200A current rating.