Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

Aurélien Olivier (1, 2) , Nicolas Wichmann (1, 2) , Jiongjong Mo (1, 2) , Albert M.D. Noudeviwa (1, 2) , Yannick Roelens (1, 2) , L. Desplanque (1, 2) , X. Wallart (3) , Francois Danneville (3) , Gilles Dambrine (1, 2) , S. Bollaert (1, 2) , François Martin (1, 2) , O. Desplats (1, 2) , Jérôme Saint-Martin (4) , Minghua Shi (4) , Y. Wang (5) , M-P Chauvat (5) , P. Ruterana (5) , Hassan Maher (6)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 ANODE - IEMN - Advanced NanOmeter DEvices - IEMN
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
4 IEF - Institut d'électronique fondamentale
5 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique
6 OMMIC

In this paper, a 200 nm n-channel inversion-type self-aligned In 0.53 Ga 0.47 As MOSFET with a Al 2 O 3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and drain regions. The 200 nm gate-length MOSFET with a gate oxide thickness of 8 nm features the transconductance of 70 mS/mm and the maximum drain current of 200 mA/mm.

Mots clés: Fabrication; MOSFET circuits; Wet etching; Aluminum oxide; Ion implantation; Annealing; Indium gallium arsenide; Lithography; Sputter etching; Gold

Domaines: Sciences de l'ingénieur [physics]

Aurélien Olivier, Nicolas Wichmann, Jiongjong Mo, Albert M.D. Noudeviwa, Yannick Roelens, et al.. Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET. 22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩. ⟨hal-00549921⟩