Disorder-induced photoluminescence up-conversion in InAs/GaAs quantum-dot samples

Guillaume Cassabois (1) , Claire Kammerer (1) , Rodolphe Sopracase (1) , C. Voisin (1) , C. Delalande (1) , P. Roussignol (1) , Jm Gerard (2)

1 LPA - Laboratoire Pierre Aigrain
2 LPN - Laboratoire de photonique et de nanostructures

Photoluminescence up-conversion under cw excitation in semiconductor quantum-dot structures is systematically studied in a sample exhibiting a crossover between two-dimensional and three-dimensional (3D) growth modes. We probe the existence of carrier up-conversion by using ultrathin quantum wells close to the quantum-dot layer. We show that the efficiency of the up-conversion is closely related to the disorder induced by the 3D-growth mode of the quantum dots. (C) 2002 American Institute of Physics.

Mots clés: ANTI-STOKES PHOTOLUMINESCENCE; WELL STRUCTURES; GROWTH

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Guillaume Cassabois, Claire Kammerer, Rodolphe Sopracase, C. Voisin, C. Delalande, et al.. Disorder-induced photoluminescence up-conversion in InAs/GaAs quantum-dot samples. Journal of Applied Physics, 2002, 91, pp.5489-5491. ⟨10.1063/1.1459622⟩. ⟨hal-00546745⟩