Progress and Challenges Towards Terahertz CMOS Integrated Circuits

E. Seok , D. Shim , C.Y. Mao , R.A. Han , S. Sankaran , C.H. Cao , W. Knap (1) , O. K.K.

1 GES - Groupe d'étude des semiconducteurs

Key components of systems operating at high millimeter wave and sub-millimeter wave/terahertz frequencies, a 140-GHz fundamental mode voltage controlled oscillator (VCO) in 90-nm CMOS, a 410-GHz push-push VCO with an on-chip patch antenna in 45-nm CMOS, and a 125-GHz Schottky diode frequency doubler, a 50-GHz phase-locked loop with a frequency doubled output at 100 GHz, a 180-GHz Schottky diode detector and a 700-GHz plasma wave detector in 130-nm CMOS are demonstrated. Based on these, and the performance trends of nMOS transistors and Schottky diodes fabricated in CMOS, paths to terahertz CMOS circuits and systems including key challenges that must be addressed are suggested. The terahertz CMOS is a new opportunity for the silicon integrated circuits community.

Mots clés: CMOS; detector; frequency doubler; on-chip patch antenna; Schottky barrier diode; VCO

Domaines: Physique Générale [physics.gen-ph]

E. Seok, D. Shim, C.Y. Mao, R.A. Han, S. Sankaran, et al.. Progress and Challenges Towards Terahertz CMOS Integrated Circuits. IEEE Custom Integrated Circuits Conference San Jose, CA, Sep 2009, United States. pp.1554. ⟨hal-00546334⟩