The exciton-polariton effect on the photoluminescence of GaN on sapphire

Bernard Gil (1) , Sandra Ruffenach (1) , Olivier Briot (1)

1 GES - Groupe d'étude des semiconducteurs

We report on the observation of free exciton photoluminescence associated with low and upper-polariton branch in GaN on sapphire. This is observed for both A and B lines. (C) 1997 Published by Elsevier Science Ltd.

Mots clés: STRUCTURE LASER-DIODES; OPTICAL-PROPERTIES; EPILAYERS

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Bernard Gil, Sandra Ruffenach, Olivier Briot. The exciton-polariton effect on the photoluminescence of GaN on sapphire. Solid State Communications, 1997, 104, pp.267-270. ⟨hal-00545875⟩