Resonant tunnelling through single donor states in GaAs/AlAs/GaAs devices

M. Gryglas , M. Baj , Benoit Jouault (1) , G. Faini , A. Cavanna

1 GES - Groupe d'étude des semiconducteurs

Our paper is a first step towards tunnelling spectroscopy of individual X-minimum-related shallow donors. We investigated I-V characteristics of submicrometer mesa structures made on GaAs/AlAs/GaAs wafers delta-doped with silicon in the middle of AlAs layer. At 4.2 K and magnetic field up to 6 T we resolved well-separated peaks attributed to resonant tunnelling via individual donors. (C) 2002 Elsevier Science B.V. All rights reserved.

Mots clés: resonant tunnelling; X-minimum-related donor; single impurity

Domaines: Science des matériaux [cond-mat.mtrl-sci]

M. Gryglas, M. Baj, Benoit Jouault, G. Faini, A. Cavanna. Resonant tunnelling through single donor states in GaAs/AlAs/GaAs devices. International Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02), Jul 2002, TOULOUSE (FRANCE), France. pp.303-304. ⟨hal-00544455⟩