Terahertz imaging with GaAs field-effect transistors

A. Lisauskas , W. von Spiegel , Stephane Boubanga Tombet (1) , Abdelouahad El Fatimy (1) , Dominique Coquillat (1) , Frederic Teppe (1) , Nina Diakonova (1) , Wojciech Knap (1) , H. G. Roskos

1 GES - Groupe d'étude des semiconducteurs

Imaging at 0.6 THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

A. Lisauskas, W. von Spiegel, Stephane Boubanga Tombet, Abdelouahad El Fatimy, Dominique Coquillat, et al.. Terahertz imaging with GaAs field-effect transistors. Electronics Letters, 2008, 44, pp.408-409. ⟨10.1049/el:20080172⟩. ⟨hal-00540633⟩