Homogeneous linewidth of the intraband transition at 1.55µm in GaN/AlN quantum dots.

Dac Trung Nguyen (1) , Wolf Wuester (1) , Philippe Roussignol (1) , Christophe Voisin (1) , Guillaume Cassabois (1) , Maria Tchernycheva (2) , François Julien (2) , Fabien Guillot (3) , Eva Monroy (3)

1 LPA - Laboratoire Pierre Aigrain
2 IEF - Institut d'électronique fondamentale
3 SP2M - UMR 9002 - Service de Physique des Matériaux et Microstructures

We present homogeneous linewidth measurements of the intraband transition at 1.55 m in GaN/AlN quantum dots by means of non-linear spectral hole-burning experiments. The square-root dependence of the differential transmission signal with the incident pump power reveals the importance of electron-electron scattering in the population relaxation dynamics. We find on the contrary that this scattering process plays a minor role in the coherence relaxation dynamics since the homogeneous linewidth of 15 meV at 5K does not depend on the incident pump power. This suggests the predominance of other dephasing mechanisms such as spectral diffusion, and temperature-dependent measurements support this hypothesis

Domaines: Autre [cond-mat.other]

Dac Trung Nguyen, Wolf Wuester, Philippe Roussignol, Christophe Voisin, Guillaume Cassabois, et al.. Homogeneous linewidth of the intraband transition at 1.55µm in GaN/AlN quantum dots.. 30th International Conference on the Physics of Semiconductors (ICPS 2010), Jul 2010, Seoul, South Korea. ⟨hal-00517737⟩